The "Nanoelectronics" (NAE) lecture for Bachelor’s programs, and the "Solid State Electronics" (FEL) and "Device Simulation" (BSI) lectures of the EIT Master’s program is closely linked to the subject of this working group. Besides the basics of semiconductor physics, the main focus of the practice-oriented tasks lies on the simulation of microelectronical components via the finite element method.
Nanoelectronics (NAE)
- Special properties of nanostructures
- Physical limits of optics
- Lithography and nanoimprint
- Confinement
- SXM technologies
- Basics of semiconductor physics: Conductivity, Doping, Bandstrucure, pn-junction, qunantisation effects, Nanowires, organic electronics
- Basics of finite element method (FEM) simulation
- Charge transmission via semiconductors: Mobility, drift diffusion current, hydrodynamic transport, scattering of charges, ballistic transport.
- Measurement of nanostructures
- Structure and properties of nanostructured components: bulk MOSFET, double-gate FET, FinFET, carbon nanotube
- Process technology of nanoelectronics (bottom up / top down)
Solid-State Electronics (FEL)
- Basics of semicondutcor physics: Metalls, insolators, semiconductors, wave function, band structure, doping, Boltzmann / Fermi statistics, generation, recombination, direct / indirect SC, SiC, heterostructures
- Charge transport in semiconductors: Poisson and continuity equation, drift / diffusion, tunneling current
- Bipolar devices: PN junction, Schottky barrier (I / V characteristics, breakthrough, thermal behavior), bipolar transistor (static and dynamic behavior, heterojunction BJT), Thyristor
- Field-effect transistor: MOS capacitance, static and dynamic behavior of MOSFETs, scaling and short-channel effects, JFET, MESFET, DMOS, IGBT
- Optical devices: Photodetectors, solar cell, LED, semiconductor laser
- Structure and function of integrated components, technology: CCD, oxidation, lithography, implantation, etching, metallization, process integration, SBC, CMOS, SOI
- Organic electronics: Organic SC, charge transport, technology, OFET
- Advanced nanodevices: Potential well, tunneling, quantum effects, Carrier confinement, strained silicon, ballistic transport, multiple-gate FET, quantum well devices, RTD, tunnel-FET, HEMT
Device Simulation (BSI)
- Hierarchy layers in system design (system-level VHDL, analog circuit simulation, SPICE, FEM)
- Compact models of integrated components (requirements, MOSFET, BJT, scaling, limits of accuracy).
- Fundamentals of Finite Element Simulation
- Fundamental physics equations for semiconductor electronics and technology (Poisson eq., Transport equation, diffusion / implantation of dopants, etching, ...)
- Process and device simulation with FEM (physical models, numerical parameters, Mesh, interfaces, ...)
- Anticipating future technologies: Modelling of nanoelectronics (quantum effects, carrier confinement, ballistic transport, Schrödinger solver)
- Internship: FEA-process and device simulation (TCAD Sentaurus) of a device component. Evaluation and documentation of a paper and / or presentation at the end of the semester.