Head of the Group

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Prof. Dr.-Ing. Alexander Klös

  • Wiesenstrasse 14, 35390 Giessen
    Raum A21.3.16
  • +49 641 309-1926
  • +49 641 309-2916
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Büro: A21.3.16

Alexander Kloes received his diploma and Ph. D. in electrical engineering at the Technical University of Darmstadt, Solid-State Electronics Laboratory, Darmstadt, Germany, in 1993 and 1997, respectively. He worked as Project Manager R&D at Braun GmbH, Kronberg, Germany, from 1997 to 2002, where he focused on IR sensor technology on silicon. Since 2002 he is Professor at Technische Hochschule Mittelhessen, Giessen, Germany. He is heading the Research Group Nanoelectronics / Device Modeling at the Competence Center for Nanotechnology and Photonics. His research interests are in semiconductor device modeling, especially for nanoscale MOS transistors and organic electronics.  Prof. Kloes was associated member in COMON (Compact Modelling Network) and member in DOMINO (Design oriented modeling for flexible electronics), each collaborations between industry and academia funded by the EU. In this context, he is contributing to the research group at Universitat Rovira i Virgili, Tarragona, Spain.

 

Associate Researcher

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Dr. Ghader Darbandy

  • Wiesenstrasse 14, 35390 Giessen
    Raum A21.4.04
  • +49 641 309-
  • +49 641 309-2916
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Büro: A21.4.04

Ghader Darbandy is a Research Associate at the Nanoelectronics Device Modeling Research Group, Competence Center for Nanotechnology and Photonics of THM-University of Applied Sciences Mittelhessen in Gießen, Germany. 

His research interests are Emerging Semiconductor Devices, Modeling, and Simulation of Advanced Nanoscale FETs and Organic Transistors, Device Design, Analysis, and Characterization. 

From March 2013 to March 2018, he was a Postdoctoral Researcher at the Chair for Electron Devices and Integrand Circuits (CEDIC) in the Institute of Electrical Engineering and Electronics (IEE), Department of Electrical and Computer Engineering, Technical University Dresden in Dresden, Germany. He was responsible and working for the Silicon Nanowire and Organic/Polymer projects within the Center for Advancing Electronics Dresden (cfaed) cluster of excellence.

 

Ph.D. Graduate Students:

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PhD Student: Atieh Anita Farokhnejad

  • Wiesenstrasse 14, 35390 Giessen
    Raum A21.4.07
  • +49 641 309-1967
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Büro: A21.4.07

Atieh Anita Farokhnejad received the Bachelor degree in Electronic Engineering from Dr. Shariaty Technical University of Tehran, Iran, in 2012. Since 2015, she holds the M.Sc. degree in Information and Communications issued by Technische Hochschule Mittelhessen in Friedberg, Germany. Currently, she is working towards her Ph.D. degree at the University Rovira i Virgili, Tarragona, Spain in cooperation with the Technische Hochschule Mittelhessen, Giessen. In October 2014 she joined the Research Group Nanoelectronics / Device Modeling. During her thesis, she was working on wavelet transform for analytical calculation of barrier transmission. The focus of her current project is on the capacity model of Tunnel-FET.

 

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PhD Student: Jakob Prüfer

  • Wiesenstrasse 14, 35390 Giessen
    Raum A21.4.07
  • +49 641 309-1971
  • +49 641 309-2916
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Büro: A21.4.07

Jakob Prüfer holds a bachelor degree in Electronic Engineering (Technische Hochschule Mittelhessen 2015). He is currently working towards the M.Sc. degree in electrical engineering as well at the Technische Hochschule Mittelhessen within the project "SOMOFLEX". This is funded by the German Federal Ministry of Education and Research by the program "IngenieurNachwuchs". It includes simulations, modeling, and probing of flexible organic short-channel thin-film-transistors.

 

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PhD Student: Kerim Yilmaz

  • Wiesenstrasse 14, 35390 Giessen
    Raum A21.4.05
  • +49 641 309-1965
  • +49 641 309-2916
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Büro: A21.4.05

Kerim Yilmaz received the academic degrees B.Sc. and M.Sc. in physics at the Justus Liebig University in Giessen in the years 2012 and 2015. From 2015 to 2017 he worked as a teacher at Technische Hochschule Mittelhessen (THM) in Giessen for the faculty MNI. Since 2017 he is working as a research assistant at the THM and is doing research and development work in the scientific workgroup Nanoelectronics / Device Modeling under the project leadership of Prof. Dr.-Ing. Alexander Klös. His research tasks include the development of physics related modeling approaches for nanowire transistor structures of different types (MOSFET, Junctionless FET, Tunnel-FET, Schottky barrier FET), in particular considering three-dimensional effects on the electrical behavior.

 

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PhD Student: Jakob Leise

  • Wiesenstrasse 14, 35390 Giessen
    Raum A21.4.07
  • +49 641 309-1966
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Büro: A21.4.07

Jakob Simon Leise received the Bachelor degree in 2016 in Electrical Engineering from the Technische Hochschule Mittelhessen in Wetzlar. He took part in the dual system, working with the Siemens AG in Marburg. During his Bachelor‘s thesis, he dealt with automated database reports using the Microsoft SQL Server Reporting Services. In March 2018, he started working in the research group for nanoelectronics and device modeling. There, he wrote his master thesis in the project "SOMOFLEX" about the capacitance modeling of organic thin-film transistors. Now, he is a Ph.D. student at the Universitat Rovira i Virgili in Tarragona, Spain and he continues his work on the capacitance modeling. Another field of research is the modeling of noise in these transistors.

 

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PhD Student: Aristeidis Nikolaou

  • Wiesenstrasse 14, 35390 Giessen
    Raum A21.4.05
  • +49 641 309-1965
  • +49 641 309-2916
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Büro: A21.4.05

Aristeidis Nikolaou received the academic degrees 5-year Diploma (Integrated Master) and M.Sc. in Electronic and Computer Engineering at the School of Electrical and Computer Engineering of the Technical University of Crete in the years 2016 and 2018 respectively. During his M.Sc. he worked in the field of compact modeling within the projects “EKV3.0 MOST modeling for 12V HVFETs” funded by EM. MICROELECTRONIC MARIN SA., Switzerland and “Compact Modeling of High Total Ionizing Dose Effects in 65nm CMOS” funded by the European Organization for Nuclear Research (CERN). Since June 2019 he is working at the THM in the scientific workgroup Nanoelectronics and Device Modeling under the project leadership of Prof. Dr.-Ing. Alexander Klös.

 

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PhD Student: Christian Römer

  • Wiesenstrasse 14, 35390 Giessen
    Raum A21.4.07
  • +49 641 309-1968
  • +49 641 309-2916
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Büro: A21.4.07

Christian Römer received his academic degree Bachelor of Engineering from Technische Hochschule Mittelhessen (University of Applied Sciences) campus Wetzlar in 2013. During and after his studies he was employed as a project manager in a company’s department of measuring and control engineering / building automation until 2017. In 2019, Christian received his academic degree Master of Science in “Electrical and Computer Engineering” from Technische Hochschule Mittelhessen (University of Applied Sciences) campus Giessen. During his studies, he started working in the research group for nanoelectronics and device modeling and was busy with the measurement and modeling of time-dependent effects in organic thin-film transistors (OTFT).

Since the end of 2019, Christian is a Ph.D. student at the Universitat Rovira i Virgili in Tarragona, Spain. His research field mainly focuses on physics-based compact modeling for Shottky-barrier field-effect transistors (SBFET) and reconfigurable field-effect transistors (RFET).

 

Former Members:

6) Dr. Fabian Horst (2014-2019)
5) Dr. Fabian Hosenfeld (2013-2018)
4) Dr. Michael Gräf (2012-2017)
3) Dr. Thomas Holtij (2010-2014)
2) Dr. Mike Schwarz (2009-2012)
1) Dr. Michaela Weidemann (2005-2009)

2) M.Eng. Franziska Hain (2012-2017)
1) M.Sc. Christian Lammers (2013-2015)