As part of the EU funding program ASCENT European Nano-electronic Network the AG Nanoelectronic has received a quarter of a 300 mm wafer for one year.

The wafer from CEA-Leti (Grenoble) contains MOS transistor structures with channel dimensions down to 10nm, which are currently only produced for research purposes. Our Ph.D. student Kerim Yilmaz is working on the development of compact models for the description of ultra-short channel length nano-structure transistors. He characterizes the transistors at THM with our device analyzer (Keysight B1500) in order to verify the developed compact model for ultra nanoscale devices.