5) [THM-OPBT_Online] E. R. Pashaki, A. Kloes, and G. Darbandy, „A Closed-Form Model for Gauss-Fermi Distribution in Amorphous and Organic Semiconductorsl“, version 1.0.0, nanoHUB, 2024.
4) [THM-TFET_Online] A. Kloes, F. Horst, A. Farokhnejad, M. Graef, „THM-TFET Compact Model“, version 1.2, nanoHUB, 2022.
3) [THM-OTFT_Online] A. Kloes, J. Leise, J. Pruefer, A. Nikolaou, and G. Darbandy, "THM-OTFT Compact Model 1.0.0" nanoHUB, 2022.
2) [CTFET_Online] A. Kloes, F. Horst, and A. Farokhnejad "Compact Solver for Double-Gate Tunnel-FETs," nanoHUB, March 2021.
1) [CNEGF_Online] F. Hosenfeld, and A. Kloes, "Compact NEGF-Based Solver for Double-Gate MOSFETs," nanoHUB, November 2020.
1) [Buch] Alexander Klös, "Nanoelektronik, Bauelemente der Zukunft," Fachbuchverlag Leipzig, im Carl Hanser Verlag, 2018.
Publikationen
================================== 2024 ==================================
Journal Articles:
[6] M. Klein, N. Dormagen, C. Dietz, M. Thoma, M. Schwarz, "Enhancing Particle String Detection in Electrorheological Plasmas Using Asymmetrical Kernel Convolutional Networks," Machine Learning: Science and Technology, 2024.
[5] M. Lahr, J. Loh, M. Schwarz, M. Lemme, T. Gemmeke, "Vehicle Surroundings Perception Using Micro-electromechanical Systems Inertial Sensors," Advanced Intelligent Systems, Wiley, 2024.
[4] N. Dormagen, M. Klein, M. Thoma, M. Schwarz, "Multi Particle Tracking in complex plasmas using a simplified and compact U-Net," Journal of Imaging, MDPI, 2024.
[3] G. Darbandy, E. Rastegar Pashaki, C. Roemer, A. Bonil, J. Wang, B. Iniguez, H. Kleemann, and A. Kloes, "High-Frequency fT and fmax in Organic Transistors: Performance and Perspective," Adv. Electron. Mater., Wiley, 2300715, 2024.
[2] F. Lime, B. Iniguez, and A. Kloes, "A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling," J. Appl. Phys., 135, 04450, 2024.
[1] A. Mounir, B. Iniguez, F. Lime, A. Kloes, T. Knobloch, and T. Grasser, "Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors," IEEE Transactions on Electron Devices, vol. 71, no. 1, pp. 884-889, 2024.
Conference and Workshop Papers/Invited Talks:
[6] M. Schwarz, N. Dormagen, M. Klein, S. Pappert, A. S. Schmitz, M. Thoma, "AI Algorithms for Plasma Particle Tracking," MIXDES, Gdansk, Poland, 2024.
[5] G. Darbandy, E. Rastegar Pashaki, B. Iniguez, H. Kleemann, and A. Kloes, "Modeling and Simulation of Vertical Organic Permeable Base Transistors," 2024 IEEE Latin American Electron Devices Conference (LAEDC), Guatemal, 2024.
[4] A. Kloes, N. Dersch, and A. Nikolaou, "Variable-Aware Circuit Design: Monte Carlo Simulation Versus Noise Analysis," 2024 IEEE Latin American Electron Devices Conference (LAEDC), Guatemal, 2024.
[3] N. Dersch, C. Roemer, E. Perez, C. Wenger, M. Schwarz, B. Iniguez, and A. Kloes, "Fast Circuit Simulation of Memristive Crossbar Array with Bimodal Stochastic Synaptic Weight," 2024 IEEE Latin American Electron Devices Conference (LAEDC), Guatemal, 2024.
[2] A. Kloes, G. Darbandy, , B. Iniguez, and A. Nikolaou, "Generic Compact Model for Variability and Low-Frequency Noise in Organic Thin-Film Transistors," 245 ECS Meeting, San Francisco, CA, USA, 2024. (Invited)
[1] G. Darbandy, E. R. Pashaki, B. Iniguez, H. Kleemann, and A. Kloes, "Organic Permeable-Base Transistors: Physically Motivated Simplification of Device Structure for Modeling and Simulation," 245 ECS Meeting, San Francisco, CA, USA, 2024. (Invited)
================================== 2023==================================
Journal Articles:
[9] C. Roemer, N. Dersch, G. Darbandy, M. Schwarz, Y. Han, Q.-T. Zhao, B. Iniguez, A. Kloes: "Physics-based compact current model for Schottky barrier transistors at deep cryogenic temperatures including band tail effects and quantum oscillations," Solid-State Electronics , Vol. 212, p. 108846, 2023.
[8] N. Dersch, E. P.-B Quesada, E. Perez, C. Wenger, C. Roemer, M. Schwarz, A. Kloes: "Efficient Circuit Simulation of a Memristive Crossbar Array with Synaptic Weight Variability," Solid-State Electronics , Vol. 209, p. 108760, 2023.
[7] A. Kloes, J. Leise, J. Pruefer, A. Nikolaou, B. Iniguez, T. Gneiting, H. Klauk, and G. Darbandy, “THM-OTFT: A Complete Physics-Based Verilog-A Compact Modl for Short-Channel Organic Thin-Film Transistors,” IEEE Journal of the Electron Devices Society, vol. 11, pp. 734-743, 2023.
[6] A. Mounir, B. Iniguez, F. Lime, A. Kloes, T. Knobloch, and T. Grasser "Compact I-V model for back-gated and double-gated TMD FETs," Solid-State Electronics , Vol. 207, p. 108702, 2023.
[5] C. Roemer, N. Dersch, G. Darbandy, M. Schwarz, Y. Han, Q.-T. Zhao, B. Iniguez, A. Kloes: "Compact Modeling of Schottky Barrier Field-Effect Transistors at Deep Cryogenic Temperatures," Solid-State Electronics , Vol. 207, p. 108686, 2023.
[4] M. Schwarz, T. D. Vethaak, V. Derycke, A. Francheteau, B. Iniguez, S. Kataria, A. Kloes, F. Lefloch, M. C. Lemme, J. P. Snyder, W. M. Weber, and L. E. Calvet, "The Schottky barrier transistor in emerging electronic devices," Nanotechnology, 2023.
[3] A. Nikolaou, J. Leise, U. Zschieschang, H. Klauk, T. Gneiting, G. Darbandy, B. Iniguez, and A. Kloes, "Compact Model for the Bias-Depended Low-Frequency Noise in Organic Thin-Film Transistors Due to Carrier-Number and Mobility.Fluctuation Effects," Organic Electronics, P. 106846, 2023.
[2] M. Koch, H. Tseng, A. Weissbach, B. Iniguez, K. Leo, A. Kloes, H. Kleemann, and G. Darbandy, "Device Physics, Modeling and Simulation of Organic Electrochemical Transistors," IEEE Journal of the Electron Devices Society, vol. 11, pp. 665-671, 2023.
[1] A. Kloes, C. Bischoff, J. Leise, E. P.-B. Quesada, C. Wenger, and E. Perez, “Stochastic switching of memristors and consideration in circuit simulation,” Solid-State Electronics, vol. 201, p. 108606, Mar. 2023.
Conference and Workshop Papers/Invited Talks:
[10] M. Schwarz, G. Darbandy, C. Roemer, N. Dersch, A. Kloes, "Simulation and Modeling of Silicon Semiconductor Devices and Sensors," MIXDES, Krakow, Poland, 2023.
[9] C. Roemer, N. Dersch, G. Darbandy, M. Schwarz, Y. Han, Q.-T. Zhao, B. Iñíguez, A. Kloes: "DC Compact Modeling of Schottky Barrier Field-Effect Transistors at Deep Cryogenic Temperatures," 7th Symposium on Schottky Barrier MOS Devices, Paris, France, 2023.
[8] A. Kloes, Y. Han, Q.-T. Zhao, C. Roemer, M. Schwarz, "Comparison Between WKB and Wavelet Approach for Analytical Calculation of Tunneling Currents in Schottky Barrier Field-Effect Transistors," MIXDES, Krakow, Poland, 2023.
[7] N. Dormagen, M. Klein, M.H. Thoma, M. Schwarz, "Machine Learning Approach for Multi Particle Tracking in Complex Plasmas," MIXDES, Krakow, Poland, 2023.
[6] A. Kloes, A. Nikolaou, N. Dersch, C. Roemer, G. Darbandy, M. Schwarz, "Noise-Based Simulation Approach For Statistical Analysis of Parameter Fluctuations in Circuits," MIXDES, Krakow, Poland, 2023. (Invited)
[5] M. Klein, N. Dormagen, A. S. Schmitz, M. H. Thoma and M. Schwarz, "Machine Learning Approach for Particle Matching, Tracing and Velocimetry with Self-Organizing Map: Application to Complex Plasmas," International Conference on Machine Learning and Applications, Jacksonville Florida, USA, 2023.
[4] A. Kloes: "Evaluation of approaches for analytical calculation of tunneling currents in Schottky barrier transistors," invited talk at: 7th Symposium on Schottky Barrier MOS Devices, Palaiseau, France, 2023. (Invited)
[3] A. Kloes: "Quantum Wave Based Modeling of Nanoscale Transistors For Circuit Simulation," invited talk at: ASCENT+ Community Workshop, Advanced Materials and Nanostructures for Disruptive Devices and Applications“, Tarragona, 2023. (Invited)
[2] A. Mounir, B. Iniguez, F. Lime, A. Kloes, T. Knobloch, T. Grasser, "Compact I-V Model of Back-Gated Monolayer MoS2 FETs with a Bias-Dependent Mobility,“ EuroSOI-ULIS, Tarragona, 2023.
[1] N. Dersch, E. P.-B Quesada, E. Perez, C. Wenger, C. Roemer, M. Schwarz, A. Kloes: "Efficient Circuit Simulation of a Memristive Crossbar Array with Synaptic Weight Variability," EuroSOI-ULIS, Tarragona, 2023.
================================== 2022 ==================================
Journal Articles:
[4] S. J. Wang, M. Sawatzki, G. Darbandy, et al., "Organic bipolar transistors," Nature., 606, 700–705, 2022.
[3] C. Bischoff, J. Leise, E. P. B. Quesada, E. Perez, C. Wenger, and A. Kloes, "Implementation of Device-to-Device and Cycle-to-Cycle Variability of Memristive Devices in Circuit Simulation,"Solid-State Electronics, vol. 194, 2022.
[2] J. Prüfer, J. Leise, J. W. Borchert, H. Klauk, G. Darbandy, A. Nikolaou, B. Iniguez, T. Gneiting, and A. Kloes, "Modeling the Short-Channel Effects in Coplanar Organic Thin-Film Transistors," in IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1099-1106, 2022.
[1] K. Yilmaz, B. Iníguez, F. Lime and A. Kloes, "Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs," in IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1588-1595, 2022.
Conference and Workshop Papers/Invited Talks:
[10] H. Kleemann, A. Bonil, J. Wang, and G. Darbandy, "Approaching GHz-Threshold with Organic Permeable Base Transistors," 2022 IEEE Latin American Electron Devices Conference (LAEDC), pp. 1-4, 2022.
[9] M. Koch, H. Tseng, A. Weissbach, B. Iniguez, K. Leo, A. Kloes, H. Kleemann, and G. Darbandy, "Numerical Modeling of Organic Electrochemical Transistors," 2022 IEEE Latin American Electron Devices Conference (LAEDC), pp. 1-4, 2022.
[8] C. Roemer, G. Darbandy, M. Schwarz, B. Iñíguez, A. Kloes, “Compact Modeling of Injection Current and Channel-Resistance Effects in Reconfigurable Field-Effect Transistors,” 6th Symposium on Schottky Barrier MOS Devices, Gießen, Germany, 2022.
[7] C. Roemer, G. Darbandy, M. Schwarz, B. Iñíguez, A. Kloes, “Modeling Approach for Injection and Channel-Resistance Effects in Schottky Barrier Field-Effect Transistors,” Graduated Students Meeting on Electronics Engineering, Tarragona, Spain, 2022.
[6] A. Kloes, J. Leise, J. Pruefer, A. Nikolaou, and G. Darbandy, "Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors Including Non-Linear Injection Effects“, CAD-TFT, Shandong University, China, 2022. (Invited)
[5] A. Kloes, J. Leise, J. Pruefer, A. Nikolaou, and G. Darbandy, "THM-OTFT: A Complete Compact Model for Simulation of Circuits with Organic Thin-Film Transistors“, International Thin-Film Transistor Conference (ITC), Surrey, UK, 2022. (Invited)
[4] C. Bischoff, J. Leise, E. P. B. Quesada, E. Perez, C. Wenger, and A. Kloes, "Implementation of Device-to-Device and Cycle-to-Cycle Variability of Memristive Devices in Circuit Simulation," EuroSOI/ULIs, Udine, Italy, 2022.
[3] C. Roemer, G. Darbandy, M. Schwarz, J. Trommer, M. Simon, A. Heinzig, T. Mikolajick, W. M. Weber, B. Iniguez, and A. Kloes, "Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors," MIXDES, Wroclaw, Poland, 2022.
[2] A. Nikolaou, J. Leise, J. Pruefer, U. Zschieschang, H. Klauk, G. Darbandy, B. Iniguez, and A. Kloes, "Impact of Mechanical Bending on the Performance of Organic Thin-Film Transistors and the Characteristic Temperature of the Density of States," MIXDES, Wroclaw, Poland, 2022.
[1] N. Bogun, E. Perez-Bosch Quesada, E. Perez, C. Wenger, A. Kloes, M. Schwarz, "Analytical Calculation of Inference in Memristor-based Stochastic Artificial Neural Networks," MIXDES, Wroclaw, Poland, 2022
================================== 2021 ==================================
Journal Articles:
[7] C. Roemer, G. Darbandy, M. Schwarz, J. Trommer, A. Heinzig, T. Mikolajick, W. M. Weber, B. Iniguez, and A. Kloes, "Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors," IEEE Journal of the Electron Devices Society, vol. 10, pp. 416-423, 2021.
[6] K. Yilmaz, B. Iniguez, F. Lime, and A. Kloes, "Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform," IEEE Trans. Electron. Devices, vol. 69, pp. 17-24, 2021.
[5] J. Leise, J. Prüfer, G. Darbandy, A. Nikolaou, M. Giorgio, M. Caironi, U. Zschieschang, H. Klauk, A. Kloes, B. Iniguez, and J. W. Borchert, "Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance," J. Appl. Phys. 130, 125501, 2021.
[4] B. Iniguez et al., "New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs," IEEE Journal of the Electron Devices Society, vol. 9, pp. 911-932, 2021.
[3] M. Schwarz, A. Kloes, and D. Flandre, "Temperature-Dependent Performance of Schottky-Barrier FET Ultra-Low-Power Diode," Solid-State Electronics, Vol. 184, No. 1, 2021.
[2] J. Prüfer, J. Leise, A. Nikolaou, J. W. Borchert, G. Darbandy, H. Klauk, B. Iniguez, T. Gneiting, and A. Kloes, "Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors," IEEE Trans. Electron Devices, vol. 68, no. 8, pp. 3843-3850, 2021.
[1] Z. Wu, Y. Liu, E. Guo, G. Darbandy, S. J. Wang, R. Hüber, A. Kloes, H. Kleemann, and K. Leo, "Efficient and low-voltage vertical organic permeable base light-emittig transistorrs", Nat. Mater. 20, 1007-1014, 2021.
Conference and Workshop Papers/Invited Talks:
[13] A. Nikolaou, G. Darbandy, J. Leise, J. Prüfer, J. W. Borchert, M. Geiger, H. Klauk, B. Iniguez, and A. Kloes, "Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors due to Carrier-Number and Correlated-Mobility Fluctuation," ESSDERC/ESSCIRC, France (Virtual), 2021.
[12] J. Leise, J. Prüfer, A. Nikolaou, G. Darbandy, H. Klauk, B. Iniguez, and A. Kloes, "Macro model for AC and Transient Simulations of Organic Thin-Film Transistor Circuits Including Nonquasistatic Effects," ESSDERC/ESSCIRC, France (Virtual), 2021.
[11] A. Kloes, „Noise analysis as generic method for fast simulation of statistical TFT circuit variability“, CAD-TFT Conference, University of Cambridge, 2021. (Invited)
[10] C. Roemer, G. Darbandy, M. Schwarz, B. Iñíguez, A. Kloes, "Closed-Form Field Emission Current Model for Schottky Barrier Field-Effect Transistors," Graduated Students Meeting URV, Tarragona (Virtual), Spain, 2021.
[9] L. Calvet, J. Snyder, M. Schwarz, "The Schottky barrier transistor in all its forms, 5th Symposium on Schottky Barrier MOS Devices," Tarragona (Virtual), Spain, 2021.
[8] C. Roemer, G. Darbandy, M. Schwarz, J. Trommer, A. Heinzig, T. Mikolajick, W. Weber, B. Iñíguez, A. Kloes, "Compact Modelling of Dually-Gated Reconfigurable Field-Effect Transistors, 5th Symposium on Schottky Barrier MOS Devices," Tarragona (Virtual), Spain, 2021.
[7] M. Schwarz, A. Buhmann, "Safety Application Car Crash Detection Using Multiclass Support Vector Machine," MIXDES, Wroclaw (Virtual), Poland, 2021.
[6] M. Schwarz, "Simulation and Modeling Methodologies: Enabler for Neuromorphic Computing Applications," MIXDES, Wroclaw (Virtual), Poland, 2021.
[5] A. Nikolaou, J. Leise, J. Pruefer, U. Zschieschang, H. Klauk, G. Darbandy, B. Iniguez, and A. Kloes, "Variability-Aware Characterization of Current Mirrors Based on Organic Thin-Film Transistors on Flexible Substrates," 2021 28th International Conference on Mixed Design of Integrated Circuits and System, Virtual, 2021.
[4] A. Kloes, "THM-TFET: A Physics-Based Verilog-A Compact Model of Tunnel- FETs for DC/AC Exploration of New Circuit Concepts,“ invited presentation at 4th IEEE International Conference on Devices for Integrated Circuit (DevIC 2021), Kalyani Government Engineering College (virtual), India, 2021.
[3] A. Kloes, "Multiscale simulation: Can compact models be more than a one-way bridge between TCAD and circuit simulation?," Third Latin American Electron Devices Conference (LAEDC), Virtual, 2021. (Invited)
[2] A. Kloes, J. Prüfer, J. Leise, A. Nikolaou, G. Darbandy, and H. Klauk, "Compact Model for Short-Channel Organic Thin-Film Transistors with Extension for Non-Quasistatic Circuit Simulation and Variability Analysis," 239th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS), 2021. (Invited)
[1] C. Roemer, G. Darbandy, M. Schwarz, J. Trommer, A. Heinzig, T. Mikolajick, W. M. Weber, B. Iniguez, and A. Kloes, "Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors," Third Latin American Electron Devices Conference (LAEDC), Virtual, 2021.
================================== 2020 ==================================
Journal Articles:
[9] A. Nikolaou, J. Leise, J. Pruefer, U. Zschieschang, H. Klauk, G. Darbandy, B. Iniguez, and A. Kloes, "Noise-Based Simulation Technique forCircuit-Variability Analysis," IEEE Journal of the Electron Devices Society, vol. 9, pp. 450-455, December 2020.
[8] K. Yilmaz, G. Darbandy, G. Reimbold, B. Iniguez, F. Lime, and A. Kloes, "Equivalent DG Dimensions Concept for Compact Modeling of Short-Channel and Thin Body GAA MOSFETs Including Quantum Confinement," IEEE Trans. Electron. Devices, vol. 67, no. 12, pp. 5381-5387, December 2020.
[7] E. Guo, Z. Wu, G. Darbandy, S. Xing, S. J. Wang, A. Tahn, M. Göbel, A. Kloes, K. Leo, and H. Kleemann, "Vertical organic permeable dual-base transistors for logic circuits," Nat. Commun. 11, 4725, 2020.
[6] J. Prüfer, J. Leise, G. Darbandy, A. Nikolaou, H. Klauk, J. W. Borchert, B. Iniguez, T. Gneiting, and A. Kloes, "Compact Modeling of Short-Channel Effects in Staggered Organic Thin-Film Transistors," IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 5082-5090, September 2020.
[5] A. Nikolaou, G. Darbandy, J. Leise, J. Prüfer, J. W. Borchert, M. Geiger, H. Klauk, B. Iniguez, and A. Kloes, "Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors due to Carrier-Number and Correlated-Mobility Fluctuation," IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 4667-4671, September 2020.
[4] J. Leise, J. Prüfer, A. Nikolaou, G. Darbandy, H. Klauk, B. Iniguez, and A. Kloes, "Macro model for AC and Transient Simulations of Organic Thin-Film Transistor Circuits Including Nonquasistatic Effects," IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 4672-4676, September 2020.
[3] S. A. Ahsan, S. K. Singh, C. Yadav, E. G. Marin, A. Kloes, and M. Schwarz, "A Comprehensive Physics-based Current-Voltage SPICE Compact Model for 2D-Material-based Top-contact Bottom-gated Schottky-Barrier FETs," IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 5188-5195, September 2020.
[2] G. Darbandy, F. Dollinger, P. Formanek, R. Huebner, S. Resch, C. Roemer, A. Fischer, K. Leo, A. Kloes, and H. Kleeman, "Unraveling Structure and Device Operation of Organic Permeable Base Transistors," Advanced Electronic Materials, Wiley, 2000230, 2020.
[1] J. Leise, J. Pruefer, G. Darbandy, M. Seifaei, Y. Manoli, H. Klauk, U. Zschieschang, B. Iniguez, and A. Kloes, "Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs," IEEE Journal of the Electron Devices Society, vol. 8, no. x, pp. 396-406, March 2020.
Conference and Workshop Papers/Invited Talks:
[15] Laurie Calvet, Paoline Coulson, John Snyder, Benjamin Iniguez, Mike Schwarz, "Schottky barrier devices for neuromorphic computing," 2020 Joint Spring MOS-AK Workshop&IEEE EDS MQ „Non-Conventional Devices and Technologies“ & Symposium on Schottky Barrier MOS Devices, Gießen (Virtual), Germany, 2020.
[14] M. Schwarz, "Simulation and Modeling of Semiconductor Devices in MEMS," 2020 Joint Spring MOS-AK Workshop&IEEE EDS MQ „Non-Conventional Devices and Technologies“ & Symposium on Schottky Barrier MOS Devices, Gießen (Virtual), Germany, 2020.
[13] M. Schwarz, "Sensor Design – From Prototype to Series DL," IEEE Poland MQ, Wroclaw (Virtual), Poland, 2020.
[12] M. Schwarz, "Sensor Design made by Bosch," (Invited), MIXDES, Wroclaw (Virtual), Poland, 2020.
[11] M. Schwarz, "Challenges and capabilities of industrialization for high-tech MEMS design and simulation methodologies (Invited)," 5th Annual Automotive Sensors and Electronics Summit, Munich, Germany, 2020.
[10] B. Iñiguez, A. Nathan, A. Kloes , Y. Bonnassieux, K. Romanjek, M. Charbonneau, J. Laurens van der Steen, G. Gelinck , T. Gneiting, F. Mohamed, G. Ghibaudo, S. Mijalkovic, A. Nejim, "Compact Modeling Solutions for Organic and Amorphous Oxide TFTs developed within the Framework of the EU-Funded DOMINO Project," CAD-TFT, virtual, 2020.
[9] A. Kloes, "Rapid multiscale simulation of nanoscale MOSFETs: Is an interplay between compact models and NEGF possible?,“ MOS-AK Workshop Silicon Valley, December 2020. (Invited)
[8] G. Darbandy, "RF performance of nanowires and nanosheet in SG, DG, and GAA,“ CEMD Workshop IPN Mexico, November 2020. (Invited)
[7] G. Darbandy, and A. Kloes, "Emerging Devices: RFETs and OPBTs," Spring MOS-AK Workshop, Giessen, September 2020. (Invited)
[6] A. Nikolaou, J. Leise, J. Pruefer, U. Zschieschang, H. Klauk, G. Darbandy, and A. Kloes, "Statistical circuit analysis by NOVA (Noise Based Variability Approach),“ Spring MOS-AK Workshop, Giessen, September 2020. (Invited)
[5] A. Kloes, "Approaches for analytical (compact) modeling of tunneling current in MOS transistors," Spring MOS-AK Workshop, Giessen, September 2020. (Invited)
[4] M. Schwarz, A. Kloes, and D. Flandre, "Schottky-barrier FET ultra-low-power diode," proceeding EuroSOI/ULIS, Caen, France, 2020.
[3] K. Yilmaz, A. Farokhnejad, F. Criado, B. Iñíguez, F. Lime, and A. Kloes, "Direct Source-to-Drain Tunneling Current in Ultra-Short Channel DG MOSFETs by Wavelet Transform," 2nd Latin American Electron Devices Conference (LAEDC), Escazu, Costa Rica, 2020.
[2] A. Nikolaou, J. Leise, J. Pruefer, U. Zschieschang, H. Klauk, G. Darbandy, and A. Kloes, "Noise Based Variability Approach for DC Statistical Analysis of Organic TFT Based Circuits," 2nd Latin American Electron Devices Conference (LAEDC), Escazu, Costa Rica, 2020.
[1] A. Kloes, "Approaches for Analytical (Compact) Modeling of Tunneling Currents in MOS Transistors," MOS-AK Workshop at 2nd Latin American Electron Devices Conference (LAEDC), Escazu, Costa Rica, 2020. (Invited)
================================== 2019 ==================================
[162] L. E. Calvet, M. Schwarz, J. P. Snyder, "Advantages of SB-MOS for neuromorphic computing," 3rd Symposium Schottky Barrier MOS Devices, Paris, 2019.
[161] A. Hald, R. Wolf, J. Seelhorst, J. Scheible, J. Lienig, S. Tibus and M. Schwarz, "Parasitic Extraction Methodology for MEMS Sensors with Active Devices," SMACD, Lausanne, Switzerland, 2019.
[160] M. Schwarz, "The Need of Simulation Methodologies for Active Semiconductor Devices in MEMS," (Invited), MIXDES, Rzeszów, Poland, 2019.
[159] M. Schwarz, "Industrialization of High-Tech MEMS (Invited)," Université catholique de Louvain, Louvain-la-Neuve, Belgium, 2019.
[158] M. Schwarz, V.Senz, A. Dannenberg, F. Heuck, T. Friedrich, C. Sorger, J. Franz, "Simulation Methodologies for Active Semiconductor Devices in MEMS," EuroSimE, Hannover, 2019.
[157] A. Farokhnejad, F. Horst, B. Iñíguez, F. Lime, and A. Kloes, “Impact of On-Current on the Static and Dynamic Performance of TFET Inverters,” Proc. S3S, pp. 1-2, 2019.
[156] A. Farokhnejad, F. Horst, B. Iñíguez, F. Lime, and A. Kloes, “Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model,” Proc. ESSDERC, pp. 202-205, 2019.
[155] G. Darbandy, S. Mothes, M. Schröter, A. Kloes and M. Claus, "Performance analysis of parallel array of nanowires and a nanosheet in SG, DG and GAA FETs," Solid-State Electronics, vol. 162, pp. 10761, 2019.
[154] M. Schwarz, L. E. Calvet, J. P. Snyder, T. Krauss, U. Schwalke, A. Kloes, "SBMOS device modeling with applications to neuromorphic computing," 3rd Symposium Schottky Barrier MOS Devices, Paris, 2019.
[153] A. Farokhnejad, M. Schwarz, F. Horst, B. Iñíguez, F. Lime, and A. Kloes, “Analytical modeling of capacitances in tunnel–FETs including the effect of schottky barrier contacts,” Solid-State Electronics, vol. 159, pp. 191-196, 2019.
[152] G. Darbandy, C. Roemer, J. S. Leise, J. Prüfer, J. W. Borchert, H. Klauk, and A. Kloes, "An Improved Measurement Technique for the Characterization of Organic Thin-Film Transistors", CAD-TFT, Tarragona, Spain, 2019.
[151] J. Prüfer, J. S. Leise, G. Darbandy, J. W. Borchert, H. Klauk, B. Iniguez, T. Gneiting and A. Kloes, "Analytical Model for VT roll-off and DIBL Effect in Short Channel Staggered Organic Thin-Film Transistors", CAD-TFT, Tarragona, Spain, 2019.
[150] J. Leise, J. Pruefer, G. Darbandy, M. Seifaei, Y. Manoli, H. Klauk, B. Iñiguez, and A. Kloes, "Verification of a Charge-Based Capacitance Model for Staggered Organic Thin-Film Transistors", CAD-TFT, Tarragona, Spain, 2019.
[149] G. Darbandy, C. Roemer, J. S. Leise, J. Prüfer, J. W. Borchert, H. Klauk, and A. Kloes, "Characterization of the Charge-Trap Dynamics in Organic Thin-Film Transistors", MIXDES2019, Rzeszów, Poland, 2019.
[148] J. Prüfer, J. S. Leise, G. Darbandy, J. W. Borchert, H. Klauk, B. Iñíguez, T. Gneiting and A. Kloes, "Analytical Model for Threshold-Voltage Shift in Submicron Staggered Organic Thin-Film Transistors", MIXDES2019, Rzeszów, Poland, 2019.
[147] F. Horst, A. Farokhnejad, B. Iñíguez, A. Kloes, "Closed-Form Modeling Approach of Trap-Assisted Tunneling Current for Use in Compact TFET Models", MIXDES 2019, Rzeszów, Poland, 2019.
[146] J. Prüfer, J. S. Leise, G. Darbandy, J. W. Borchert, H. Klauk, B. Iñíguez, T. Gneiting and A. Kloes, "Compact Model for Threshold Voltage Shift in Short-Channel Staggered Organic Thin-Film Transistors", ICOE2019, Hasselt, Belgium, 2019.
[145] A. Kloes, J. Pruefer, J. S. Leise, G. Darbandy, H. Klauk, "Physics Based Compact Model for Organic Thin Film Transistors with a Universal Charge Expression for Quasi Static Operation", Proceedings 235st Electrochemical Society Meeting, Dallas, 2019.
[144] K. Yılmaz, G. Darbandy, B. Iniguez, F.s Lime and A. Kloes, "Equivalent Length Concept for Compact Modeling of Short-Channel GAA and DG MOSFETs", EuroSOI-ULIS, Grenoble, 2019.
[143] J. S. Leise, J. Pruefer, G. Darbandy, A. Kloes, "Charge-Based Compact Modeling of Capacitances in Staggered OTFTs", Latin American Electron Devices Conference (LAEDC), Vol.1, Pages 1–4, 2019.
[142] J. Pruefer, A. Kloes, A. Nejim, "Verification of a Compact Model for Organic Thin-Film-Transistors by Using MixedMode Creating a CMOS Inverter Circuit with TCAD Transistor Devices", Silvaco.com, The Simulation Standard, Pages 8-11, 2019.
================================== 2018 ==================================
[141] F. Horst, A. Farokhnejad, G. Darbandy, B. Iñíguez, A. Kloes, "Area Equivalent WKB Compact Modeling Approach for Tunneling Probability in Hetero-Junction TFETs Including Ambipolar Behavior," International Journal of Microelectronics and Computer Science, Vol.9, No. 2, Pages 47-59, 2018.
[140] M. Schwarz, L. E. Calvet, J. P. Snyder, T. Krauss, U. Schwalke, A. Kloes, "Analysis and Investigation of Schottky Barrier MOSFET Current Injection with Process and Device Simulation," International Journal of Microelectronics and Computer Science, Vol.9, No. 1, Pages 1-8, 2018.
[139] B. Iniguez, A. Kloes, "Design-oriented modeling of TFTs for flexible electronics - Project DOMINO," invited talk at conference CAD-TFT 2018, Shenzhen, 2018.
[138] A. Kloes, J. Pruefer, J. Leise, G. Darbandy, "Charge-based DC/AC compact modeling of organic TFTs," invited talk at conference CAD-TFT 2018, Shenzhen, 2018.
[137] J. Pruefer, B. Iñiguez, H. Klauk, A. Kloes, "Compact Modeling of Non-Linear Contact Resistance in Staggered and Coplanar Organic Thin-Film Transistors," Proceedings ICOE 2018, Bordeaux, 2018
[136] K. Yılmaz, G. Darbandy, B. Iñíguez, F. Lime, A. Kloes, "Equivalent Correlation between Short Channel DG & GAA MOSFETs," MOS-AK ESSDERC/ESSCIRC Workshop, Dresden, 2018.
[135] L.E. Calvet, C. Bennett, D. Querlioz, T. Krauss, U. Schwalke, A. Kloes, M. Schwarz, "Compact Modeling For Neuromorphic Applications," MOS-AK ESSDERC/ESSCIRC Workshop, Dresden, 2018
[134] M. Schwarz, L. E. Calvet, J. P. Snyder, T. Krauss, U. Schwalke, A. Kloes, "Schottky Barrier Mosfet Device Physics For Cryogenic Applications," MOS-AK ESSDERC/ESSCIRC Workshop, Dresden, 2018.
[133] F. Horst, "DC/AC compact modeling of Tunnel-FETs, 2nd Symposium on Schottky barrier MOS devices," TU Darmstadt, 2018.
[132] F. Horst, A. Farokhnejad, Q. T. Zhao, B. Iñíguez, A. Kloes, "2-D Physics-Based Compact DC Modeling of Double-Gate Tunnel-FETs," IEEE Trans. on Elec. Dev., Volume: 66, Issue: 1, 2018.
[131] M. Schwarz, L. E. Calvet, J. P. Snyder, T. Krauss, U. Schwalke, A. Kloes, "Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection," MIXDES 2018, Gdynia, Poland, 2018.
[130] F. Horst, A. Farokhnejad, B. Iñíguez, A. Kloes, "An Area Equivalent WKB Approach to Calculate the B2B Tunneling Probability for a Numerical Robust Implementation in TFET Compact Models," MIXDES 2018, Gdynia, Poland, 2018.
[129] A. Farokhnejad, M. Schwarz, M. Graef, F. Horst, B. Iñíguez, F. Lime, A. Kloes, "Effect of Schottky Barrier Contacts on Measured Capacitances in Tunnel-FETs," EuroSOI-ULIS, Granada, 2018.
[128] M. Graef, F. Hosenfeld, F. Horst, A. Farokhnejad, B. Iñíguez, A. Kloes, "Capturing Performance Limiting Effects in Tunnel-FETs," ISTE OpenScience Journal Nanoelectronic Devices, Volume 18-1, 2018.
[127] M. Graef, F. Hosenfeld, F. Horst, A. Farokhnejad, F. Hain, B. Iñíguez, A. Kloes, "Advanced Analytical Modeling of Double-Gate Tunnel-FETs - A Performance Evaluation," Solid-State Electronics, Volume 141, Pages 31-39, 2018.
================================== 2017 ==================================
[126] M. Schwarz, L. E. Calvet, J. P. Snyder, T. Krauss, U. Schwalke, A. Kloes, "Simulation Framework and Thorough Analysis of the Impact of Barrier Lowering on the Current in SB-MOSFETs," International Journal of Microelectronics and Computer Science, Vol.8, No. 2, Pages 72-79, 2017.
[125] F. Horst, A. Farokhnejad, M. Graef, F. Hosenfeld, G. V. Luong, C. Liu, Q.-T. Zhao, F. Lime, B. Iñíguez, A. Kloes, "DC/AC Compact Modeling of TFETs for Circuit Simulation of Logic Cells Based on an Analytical Physics-Based Framework," 25 Austrian Workshop on Microelectronics Austrochip, Linz, Austria, 2017.
[124] F. Hosenfeld, F. Horst, B. Iñíguez, F. Lime, A. Kloes, "A Quantum Wave Based Compact Modeling Approach for the Current in Ultra-Short DG MOSFETs Suitable for Rapid Multi-Scale Simulations," Solid-State Electronics, Volume 137, Pages 70-79, 2017.
[123] A. Kloes, F. Hain, M. Graef, B. Iñiguez, "Charge-Based Compact Model for DC Current in Organic TFT Including Non-Linear Injection Effects with a Close Link to Electrical Device Parameters," Proceedings 231st ECS Meeting, New Orleans, 2017.
[122] A. Kloes, M. Graef, F. Hain, H. Klauk, J. Pruefer, "Analytical modeling of non-linear injection effects in organic TFT," Presentation at 2017 International Workshop on Computer-Aided Design of Thin-Film Transistor (CAD-TFT), University of Cambridge, Cambridge, 2017.
[121] M. Graef, F. Hain, A. Kloes, "Realistic Small-Signal AC Simulation of a Bottom-Gate oTFT," Presentation at 2017 International Workshop on Computer-Aided Design of Thin-Film Transistor (CAD-TFT), University of Cambridge, Cambridge, 2017.
[120] M. Schwarz, L. E. Calvet, J. P. Snyder, T. Krauss, U. Schwalke, A. Kloes, "On the Physical Behavior of Cryogenic IV and III–V Schottky Barrier MOSFET Devices," IEEE Transactions on Electron Devices, Volume 64, Number. 9, Pages. 3808-3815, 2017.
[119] F. Hosenfeld, F. Horst, F. Lime, B. Iniguez, A. Kloes, "Non-Iterative NEGF Based Model for Band-to-Band Tunneling Current in DG TFETs," MIXDES, Bydgoszcz, 2017.
[118] M. Graef, F. Hain, F. Hosenfeld, F. Horst, A. Farokhnejad, B. Iniguez, A. Kloes, "Analytical Modeling of RDF Effects on the Threshold Voltage in Short-Channel Double-Gate MOSFETs," MIXDES, Bydgoszcz, 2017.
[117] M. Schwarz, J.P. Schnyder, T. Krauss, U. Schwalke, L.E. Calvet, A.Kloes, "Simulation Framework for Barrier Lowering in Schottky Barrier MOSFETs," MIXDES, Bydgoszcz, 2017.
[116] F. Hain, M. Graef, B. Iniguez, A. Kloes, "Charge Based, Continuous Compact Model for the Channel Current in Organic Thin-Film Transistors for All Regions of Operation," Solid-State Electronics, Volume 133, Pages 17-24, 2017.
[115] A. Farokhnejad, M. Graef, F. Horst, C. Liu, Q.T. Zhao, B. Iñíguez, F. Lime, A. Kloes, "Compact Modeling of Intrinsic Capacitances in Double-Gate Tunnel-FETs," EUROSOI-ULIS, Athen, 2017.
[114] F. Horst, M. Graef, F. Hosenfeld, A. Farokhnejad, G. V. Luong, Q. T. Zhao, B. Iñíguez, A. Kloes, "Static noise margin analysis of 8T TFET SRAM cells using a 2D compact model adapted to measurement data of fabricated TFET devices," EUROSOI-ULIS, Athen, 2017.
================================== 2016 ==================================
[113] F. Hosenfeld, F. Horst, M. Graef, A. Farokhnejad, A. Kloes, B. Iñíguez, and F. Lime, "Rapid NEGF-Based Calculation of Ballistic Current in Ultra-Short DG MOSFETs for Circuit Simulation," International Journal of Microelectronics and Computer Science, Vol.7, No. 2, P. 65-72, 2016.
[112] F. Horst, M. Graef, F. Hosenfeld, A. Farokhnejad, F. Hain, G. V. Luong, Q. T. Zhao, B. Iniguez, A. Kloes, "Implementation of a DC Compact Model for Double-Gate Tunnel-FET Based on 2D Calculations and Application in Circuit Simulation," ESSDERC/ESSCIRC 2016, Lausanne, 2016.
[111] M. Schwarz, A. Kloes, "III-V SB MOSFETs - Analytical Modeling and Performance Analysis From Room to Cryogenic Temperature," MOS-AK ESSDERC/ESSCIRC Workshop, Lausanne, 2016.
[110] A. Kloes, F. Hain, M. Graef, B. Iniguez, "Closed-Form Charge-Based Current Model of Organic TFT Including Non-Linear Injection Effects," MOS-AK ESSDERC/ESSCIRC Workshop, Lausanne, 2016.
[109] M. Schwarz, A. Kloes, "Analysis and Performance Study of III–V Schottky Barrier Double-Gate MOSFETs Using a 2-D Analytical Model," IEEE Trans. Electron Devices, Vol. 63, No. 7, July 2016.
[108] M. Schwarz, A. Kloes, "Analysis and 2D Analytical Modeling of III-V Schottky Barrier Double-Gate MOSFETs," MIXDES 2016, Lodz, 2016.
[107] A. Kloes, F. Hain, M. Graef, S. Jacob, B. Iniguez, "Charge-Based Current Model of Organic TFT for All Operation Regions with a Close Link to Electrical Device Parameters," Workshop on Flexible Electronics 2016, Tarragona, 2016.
[106] F. Hosenfeld, M. Graef, F. Horst, B. Iniguez, F. Lime, A. Kloes, "Modeling Approach for Rapid NEGF-Based Simulation of Ballistic Current in Ultra-Short DG MOSFETs," MIXDES, Lodz, 2016.
[105] M. Graef, F. Hain, F. Hosenfeld, F. Horst, A. Farokhnejad, B. Iñíguez, A. Kloes, "Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs," MIXDES, Lodz, 2016.
[104] F. Hosenfeld, M. Graef, F. Horst, B. Iniguez, F. Lime, A. Kloes, "Semi-Analytical Model for Leakage Current in Ultra-Short DG MOSFET Based on NEGF Formalism," MOS-AK, Dresden, 2016.
[103] M. Graef, F. Hain, F. Hosenfeld, F. Horst, A. Farokhnejad, B. Iñíguez, A. Kloes, "Numerical analysis and analytical modeling of RDF in DG Tunnel-FETs," EUROSOI-ULIS, Vienna, 2016.
================================== 2015 ==================================
[102] F. Hosenfeld, M. Graef, F. Hain, B. Iniguez, F. Lime, A. Kloes, "Dynamic Look-up Table for Increased Numerical Efficiency of Multi-Scale Simulation Approaches in Circuit Simulations," MOS-AK, Graz, 2015.
[101] A. Farokhnejad, M. Graef, A. Kloes, "Wavelet-Based Calculation of the Transmission Coefficient for Tunneling Events in Tunnel-FETs," MIXDES, 2015.
[100] F. Hain, C. Lammers, F. Hosenfeld, Hagen Klauk, Ute Zschieschang, B. Iñiguez, A. Kloes, "Charge-based Modelling of the Channel Current in Organic Field-Effect Transistors Considering Injection Effects," Electrochemical Society Meeting, Chicago, 2015.
[99] F. Hain, C. Lammers, F. Horst, F. Hosenfeld, B. Iniguez, A. Kloes, "Continuous Charge-Based Current Model for Organic TFT Derived From Gaussian DOS," Proceedings ICOE 2015, Erlangen,2015.
[98] M. Graef, F. Hain, F. Hosenfeld, B. Iniguez, A. Kloes, "Advanced Analytical Modeling of Nanowire Tunnel-FETs," Conference Nanoelectronic Days, Forschungszentrum Jülich, 2015.
[97] M. Graef, F. Hain, F. Hosenfeld, B. Iniguez, A. Kloes, "Analytical approach to consider Gaussian junction profiles in compact models of tunnel-FETs," 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 213-216, 2015.
[96] T. Cramer, A. Kyndiah, A. Kloes, M. Murgia, B. Fraboni, F. Biscarini, "Charge density increase in submonolayer organic field-effect transistors," PHYSICAL REVIEW B 91, 205305, 2015.
[95] T. Holtij, A. Kloes, B. Iñíguez, "3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs, including simple treatment of quantization effects, Solid-State Electronics," Solid-State Electronics, Vol. 112, Pages 85–98, 2015.
================================== 2014 ==================================
[94] M. Schwarz, A. Kloes, "2D physics-based closed-form modeling of dopant-segregated Schottky barrier UTB MOSFETs," Solid-State Electronics, Volume 99, Pages 65–77, 2014.
[93] F. Hain, C. Lammers, M. Graef, A. Kloes, B. Iñiguez, "Physics-based Model for the Threshold Voltage in Organic Field-Effect Transistors Including Dynamic Trap Filling," ISFOE 2014, Thessaloniki, Greece, 2014.
[92] F. Hain, M. Graef, C. Lammers, A. Kloes, B. Iñiguez, "Charge Based, Continous Current Model for Organic Field-Effect Transistors," ICOE 2014, Modena, Italy, 2014.
[91] M. Graef, T. Holtij, F. Hain, A. Kloes, B. Iñiguez, "A 2D closed-form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current," Microelectronics Journal, 2014.
[90] T. Holtij, M. Graef, A. Kloes, B. Iñiguez, "3-D Compact Model for Nanoscale Junctionless Triple-Gate Nanowire MOSFETs," ESSDERC/ESSCIRC 2014, Venice, Italy, 2014.
[89] M. Graef, T. Holtij, F. Hain, A. Kloes, B. Iñiguez, "Improved Analytical Potential Modeling in Double-Gate Tunnel-FETs," MIXDES 2014, Lublin, Poland, 2014.
[88] T. Holtij, M. Graef, A. Kloes, B. Iñiguez, "Modeling and Performance Study of Nanoscale Double-Gate Junctionless and Inversion Mode MOSFETs Including Carrier Quantization Effects," Microelectronics Journal, 2014.
[87] M. Graef, T. Holtij, F. Hain, A. Kloes, B. Iñiguez, "Two-Dimensional Modeling of an Ultra-Thin Body Single-Gate Si Tunnel-FET," ULIS 2014, Stockholm, Sweden, 2014.
[86] M. Graef, T. Holtij, F. Hain, A. Kloes, B. Iñiguez, "2D Analytical Modeling of the Trap-Assisted-Tunneling Current in Double-Gate Tunnel-FETs," EuroSOI 2014, Tarragona, Spain, 2014.
[85] T. Holtij, M. Graef, F. Hain, A. Kloes, B. Iñiguez, "Modeling of Quantization Effects in Nanoscale DG Junctionless MOSFETs," EuroSOI 2014, Tarragona, Spain, 2014.
[84] T. Holtij, M. Graef, F. Hain, A. Kloes, B. Iñiguez, "Compact Model for Short-Channel Junctionless Accumulation Mode (JAM) Double-Gate MOSFETs," IEEE Trans. Electron Devices, Vol. 61, No 2, February 2014.
================================== 2013 ==================================
[83] M. Graef, T. Holtij, F. Hain, A. Kloes, B. Iñiguez, "Metall – A Generic Analytical Current Model for Hetero-Junction Double-Gate Tunnel-FETs Including Two-Dimensional Effects," ISDRS, Maryland, USA, 2013.
[82] F. Hain, M. Graef, T. Holtij, A. Kloes, B. Iñiguez, "Metall – Investigation of the Influence of the Source/Drain Barrier Height on the I/V characteristics of OFETs by Using a 2D Analytical Model for the Injection Current," ISDRS, Maryland, USA, 2013.
[81] A. Kloes, M. Graef, F. Hain, T. Holtij, M. Schwarz, "COMON: SOI Multigate Devices Modeling," Spring MOS-AK/GSA Workshop, Munich, 2013.
[80] A. Kloes, M. Schwarz, T. Holtij, A. Navas, "Quantum Confinement and Volume Inversion in MOS³ Model for Short-Channel Tri-Gate MOSFETs," IEEE Trans. Electron Devices, Vol. 60, No. 8, August 2013.
[79] F. Hain, M. Graef, M. Schwarz, T. Holtij, A. Kloes, B. Iñiguez, "Metall – Organic Interfaces: Two-Dimensional Analytical Modeling of non-linear Charge Injection in Bottom-Contact Organic Field-Effect Transistors," SPIE Organic Photonics + Electronics Conferences, San Diego, USA, 2013.
[78] F. Hain, M. Graef, T. Holtij, A. Kloes, B. Iñiguez, "Analytical Model for the Potential in Bottom Contact OFETs and Approach for Calculation of the Tunneling/Thermionic Source/Drain Injection Current," ICOE 2013, Grenoble, France, 2013.
[77] F. Hain, M. Graef, M. Schwarz, T. Holtij, A. Kloes, B. Iñiguez, "Two-Dimensional Analytical Modeling of non-linear Charge Injection in Bottom-Contact Organic Field-Effect Transistors," LOPE-C 2013, Munich, Germany, 2013.
[76] T. Holtij, M. Schwarz, M. Graef, F. Hain, A. Kloes, B. Iñíguez, "Unified Charge Model for Short-Channel Junctionless Double-Gate MOSFETs," MIXDES 2013, Gdynia, Poland, 2013.
[75] M. Graef, M. Schwarz, T. Holtij, F. Hain, A. Kloes, B. Iñíguez, "Two-dimensional Physics-based Modeling of Electrostatics and Band-to-Band Tunneling in Tunnel-FETs," MIXDES 2013, Gdynia, Poland, 2013.
[74] T. Holtij, M. Schwarz, M. Graef, F. Hain, A. Kloes, B. Iñíguez, "Model for investigation of Ion/Ioff ratios in short-channel junctionless double-gate MOSFETs," ULIS 2013, Warwick, UK, 2013.
[73] M. Graef, M. Schwarz, T. Holtij, F. Hain, A. Kloes, B. Iñíguez, "Two-dimensional Bias Dependent Model for the Screening Length in Double-Gate Tunnel-FETs," ULIS 2013, Warwick, UK, 2013.
[72] M. Schwarz, T. Holtij, A. Kloes, B. Iniguez, "Compact Modeling Solutions for Short-Channel SOI Schottky Barrier MOSFETs," Solid-State Electronics, Vol. 82, pp. 86-98, April 2013.
[71] M. Schwarz, T. Holtij, A. Kloes, B. Iniguez, "Performance Study of a Schottky Barrier Double-Gate MOSFET Using a 2D Analytical Model," IEEE Trans. Electron Devices, Vol. 60, No. 2, February 2013.
[70] M. Graef, M. Schwarz, T. Holtij, F. Hain, A. Kloes, "Two-dimensional Analytical Model for Performance Evaluation of Double-Gate Tunnel-FETs," EuroSOI 2013, Paris, France, 2013.
[69] T. Holtij, M. Schwarz, M. Graef, F. Hain, A. Kloes, B. Iniguez, "2D Current Model for Junctionless DG MOSFETs," EuroSOI 2013, Paris, France, 2013.
[68] T. Holtij, M. Schwarz, A. Kloes, B. Iniguez, "Threshold Voltage, and 2D Potential Modeling Within Short-Channel Junctionless DG MOSFETs in Subthreshold Region," Solid State Electron, Vol. 90, pp. 107-115, December 2013.
================================== 2012 ==================================
[67] M. Schwarz, T. Holtij, A. Kloes, B. Iniguez, "Investigation of Scaling Behavior of Schottky Barrier Double-Gate MOSFETs Using a 2D Analytical Model," ESSDERC Fringe 2012, Bordeuax, France, 2012.
[66] T. Holtij, M. Schwarz, A. Kloes, B. Iniguez, "Analytical 2D Modeling of Junctionless and Junction-Based Short-Channel Multigate MOSFETs," ESSDERC Fringe 2012, Bordeuax, France, 2012.
[65] F. Ortmann, S. Roche, J. C. Greer, G. Huhs, X. Oriols, T. Shulthess, T. Deutsch, P. Weinberger, M. Payne, J. M. Sellier, J. Sprekels, J. Weinbub, K. Rupp, D. Vasileska, E. Alfinito, L. Reggiani, D. Guerra, D. K. Ferry, M. Saraniti, S. M. Goodnick, A. Kloes, L. Colombo, K. Lilja, J. Mateos, T. Gonzalez, E. Velazquez, P. Palestri, A. Schenk, M. Macucci, "Multi-scale Modeling for Devices and Circuits," E-Nano Newsletter Special Issue April 2012, Phantoms Foundation, Madrid, 2012.
[64] M. Schwarz, T. Holtij, A. Kloes, B. Iniguez, "Complex 2D Electric Field Solution in Undoped Double-gate MOSFETs," IETE Journal of Research, Vol. 58, No. 3, May-June 2012.
[63] T. Holtij, M. Schwarz, A. Kloes, B. Iniguez, "2D Analytical Calculation of the Parasitic Source/Drain Resistances in DG-MOSFETs Using the Conformal Mapping Technique," IETE Journal of Research, Vol. 58, No. 3, May-June 2012.
[62] M. Schwarz, T. Holtij, A. Kloes, B. Iniguez, "Two-dimensional Physics-based Modeling of Dopant-segregated Schottky Barrier UTB MOSFETs," MIXDES 2012, Warsaw, Poland, 2012.
[61] M. Schwarz, T. Holtij, A. Kloes, B. Iniguez, "Explicit Model for Tunneling and Thermionic Current in Schottky Barrier Double-Gate MOSFETs," ULIS 2012, Grenoble, France, 2012.
[60] T. Holtij, M. Schwarz, A. Kloes, B. Iniguez, "2D Analytical Potential Modeling of Junctionless DG MOSFETs in Subthreshold Region Including Proposal for Calculating the Threshold Voltage," ULIS 2012, Grenoble, France, 2012.
[59] M. Schwarz, T. Holtij, A. Kloes, B. Iniguez, "Analytical Compact Modeling Framework for the 2D Electrostatics in Lightly Doped Double-Gate MOSFETs," Solid-State Electronics, Vol. 69, No. 1, March 2012.
[58] M. Schwarz, T. Holtij, A. Kloes, B. Iniguez, "Explicit Model Equations for the Tunneling Current Density in Schottky Barrier Double-Gate MOSFETs," EuroSOI 2012, Montpellier, France, 2012.
[57] T. Holtij, M. Schwarz, A. Kloes, B. Iniguez, "2D Analytical Modeling of the Potential within Juntionless DG MOSFETs in the Subthreshold Regime," EuroSOI 2012, Montpellier, France, 2012.
[56] A. Kloes, M. Schwarz, T. Holtij, "MOS3: A New Physics-Based Explicit Compact Model for Lightly-Doped Short-Channel Triple-Gate SOI MOSFETs," IEEE Trans. Electron Devices, Vol. 59, No. 2, February 2012.
================================== 2011 ==================================
[55] A. Kloes, M. Schwarz, T. Holtij, "Physics-Based, Closed-Form DC Model for Lightly-Doped Short Channel Triple-Gate MOSFETs Including Three-Dimensional Effects," ISDRS 2011, University of Maryland, 2011.
[54] M. Schwarz, T. Holtij, A. Kloes, B. Iniguez, "2D Analytical DC Model for Nanoscale Schottky Barrier DG-MOSFETs," ISDRS 2011, University of Maryland, USA, 2011.
[53] A. Kloes, M. Schwarz, T. Holtij, "Compact DC Model for Lightly-Doped Short Channel Triple-Gate MOSFETs," MOS-AK Workshop at ESSDERC/ESSCIRC 2011, Helsinki, Finland, 2011.
[52] M. Schwarz, T. Holtij, A. Kloes, B. Iniguez, "Macro Model for Drift/Diffusion Effects in Short-Channel Undoped Schottky Barrier DG-MOSFETs," MOS-AK Workshop at ESSDERC/ESSCIRC 2011, Helsinki, Finland, 2011.
[51] T. Holtij, M. Schwarz, A. Kloes, B. Iniguez, "2D Analytical Modeling of the Potential in Doped Multiple-Gate-FETs Including Inversion Charge," Fringe Poster Session at ESSDERC/ESSCIRC 2011, Helsinki, Finland, 2011.
[50] M. Schwarz, T. Holtij, A. Kloes, B. Iniguez, "I-V Model for Lightly Doped Schottky Barrier DG-MOSFETs Including 2D Effects," Fringe Poster Session at ESSDERC/ESSCIRC 2011, Helsinki, Finland, 2011.
[49] M. Schwarz, T. Holtij, A. Kloes, B.Iniguez, "2D Analytical Calculation of the Electric Field in Lightly Doped Schottky Barrier Double-Gate MOSFETs and Estimation of the Tunneling/Thermionic Current," Solid-State Electronics, Vol. 63, No. 1, 2011.
[48] M. Schwarz, T. Holtij, A. Kloes, B. Iniguez, "2D Analytical Framework for Compact Modeling of the Electrostatics in Undoped DG MOSFETs," MIXDES 2011, Gliwice, Poland, 2011.
[47] T. Holtij, M. Schwarz, A. Kloes, B. Iniguez, "2D Analytical Calculation of the Source/Drain Access Resistance in DG-MOSFET Structures," ULIS 2011, Cork, Ireland, 2011.
[46] M. Schwarz, T. Holtij, A. Kloes, B. Iniguez, "2D Analysis of Source/Drain Carrier Tunneling in Lightly Doped Schottky Barrier DG-MOSFETs Using a Fully Analytical Model," ULIS 2011, Cork, Ireland, 2011.
[45] M. Schwarz, A. Kloes, B. Iniguez, "2D Analytical Calculation of the Current in Lightly Doped Schottky Barrier Double-Gate MOSFET," EUROSOI 2011, Granada, Spain, 2011.
================================== 2010 ==================================
[44] T. Holtij, M. Schwarz, A. Kloes, "Analytical two-dimensional model for the parasitic source/drain resistance in DG-MOSFETs," Workshop MOS-AK/GSA ESSDERC/ESSCIRC 2010, Seville, Spain, 2010.
[43] M. Schwarz, A. Kloes, B. Iniguez, "2D Analytical Calculation of the Tunneling Current in Lightly Doped Schottky Barrier Double-Gate MOSFET," ESSDERC 2010 Fringe Poster Session, ESSDERC/ESSCIRC 2010, Seville, Spain, 2010.
[42] M. Schwarz, A. Kloes, B. Iniguez, "Closed-Form 2D Analytical Model for the Electric Field in Lightly Doped Schottky Barrier Double-Gate MOSFET," Oral Presentation Graduated Student Meeting 2010, Universitat Rovira i Virgili, Spain, 2010.
[41] M. Schwarz, M. Weidemann, A. Kloes, B. Iniguez, "2D Analytical Calculation of the Electrostatic Potential in Lightly Doped Schottky Barrier Double-Gate MOSFET," Solid-State Electronics, Vol. 54, No. 11, 2010.
[40] M. Schwarz, A. Kloes, B. Iniguez, "Analytical 2D Model for the Channel Electric Field in Undoped Schottky Barrier Double-Gate MOSFET," MIXDES 2010, Wroclaw, Poland, 2010.
[39] A. Kloes, M. Weidemann, M. Schwarz, "Analytical Current Equation for Short-Channel SOI Multigate FETs Including 3D Effects," Solid-State Electronics, Vol. 54, No. 11, 2010.
[38] M. Schwarz, A. Kloes, B. Iniguez, "2D Closed-Form Model for the Source/Drain Orthogonal Electric Field in Lightly Doped Schottky Barrier Double-Gate MOSFET," Poster ULIS 2010, Glasgow, Scotland, 2010.
================================== 2009 ==================================
[37] M. Schwarz, M. Weidemann, A.Kloes, B. Iniguez, "Two-Dimensional Model for the Potential Profile in a Short Channel Schottky Barrier DG-FET," ISDRS 2009, University of Maryland, USA, 2009.
[36] M. Weidemann, A. Kloes, M. Schwarz, B. Iniguez, "Analysis and Modeling of the Pinch-Off Point in a Lightly Doped Asymmetrically Biased Double Gate MOSFET," ISDRS 2009, University of Maryland, USA, 2009.
[35] M. Weidemann, A. Kloes, M. Schwarz, B. Iniguez, "Two-dimensional analytical model for channel length modulation in lightly-doped DG FETs," Electronics and Telecommunications Quarterly published by Committee of Electronics and Telecommunication of the Polish Academy of Sciences, Vol. 55, No. 4, 2009.
[34] A. Kloes, M. Weidemann, M. Schwarz, "Closed-form current equation for short-channel triple-gate FETs," MOS-AK Workshop at ESSDERC 2009, poster session, Athens, Greece, 2009.
[33] M. Schwarz, M. Weidemann, A.Kloes, B. Iniguez, "2D analytical solution of potential in lightly doped Schottky barrier double-gate MOSFET," ESSDERC Fringe 2009, Athens, Greece, 2009.
[32] M. Weidemann, A. Kloes, M. Schwarz, B. Iniguez, "2D physics-based compact model of channel length modulation for asymmetrically biased double-gate MOSFETs," ESSDERC Fringe 2009, Athens, Greece, 2009.
[31] M. Schwarz, M. Weidemann, A.Kloes, B. Iniguez, "2D analytical model of the potential distribution in lightly doped Schottky barrier DG-MOSFET," Poster Graduated Student Meeting 2009, Universitat Rovira i Virgili, Spain, 2009.
[30] M. Weidemann, A. Kloes, M. Schwarz, B. Iniguez, "2D physics-based compact model for channel length modulation in lightly doped DG FETs," MIXDES 2009, Lodz, Poland, 2009.
[29] A. Kloes, M. Weidemann, M. Schwarz, "Analysis of 3D current flow in undoped FinFETs and approaches for compact modeling," MIXDES 2009, Lodz, Poland, 2009.
[28] A. Kloes, "2D compact modeling of semiconductor devices by conformal mapping,” invited chapter in: S. B. Kobadze (Editor) “Solid-State Electronics Research Trends”, Nova Science Publishers, Inc., 2009.
[27] A. Kloes, M. Weidemann, M. Schwarz, T. Holtij, "Design Considerations for Undoped FinFETs Based on a 3D Compact Model for the Potential Barrier," Proceedings ULIS 2009, Aachen, 2009.
================================== 2008 ==================================
[26] M. Weidemann, M. Schwarz, A. Kloes, B. Iniguez, "Analytical 2D Modelling of Channel Length Modulation in DG FETs," ESSDERC Fringe 2008, Edinburgh, Scotland, 2008.
[25] A. Kloes, M. Weidemann, D. Goebel, B. T. Bosworth, "Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for VT and Subthreshold Slope," IEEE Trans. Electron Devices, Vol. 55, No. 12, 2008.
[24] A. Kloes, M. Weidemann, "Compact Modeling of Nanoscale Multiple-Gate FETs," MOS-AK Meeting, MiPlaza, High Tech Campus Eindhoven, 2008.
[23] A. Kloes, M. Weidemann, "Analytical Modeling of the Electrostatic Potential in MOS Devices by Conformal Mapping," MIXDES 2008, Invited paper to the special session on compact modeling, Poznan, Poland, 2008.
[22] M. Weidemann, A. Kloes, B. Iniguez, "Compact Model of Output Conductance in Nanoscale Bulk MOSFET based on 2D Analytical Calculations," Solid-State Electron., Vol. 52, No. 11, 2008.
================================== 2007 ==================================
[21] M. Weidemann, A. Kloes, B. Iniguez, "Physics-based modeling of output conductance in nanoscale bulk MOSFET by analytically solving 2D Poisson," Proceedings ISDRS 2007, University of Maryland, USA, 2007.
[20] A. Kloes, M. Weidemann, D. Goebel, B. T. Bosworth, "Closed-Form Physics-Based Models for Threshold Voltage and Subthreshold Slope in FinFETs Including 3D Effects," Proceedings ISDRS 2007, University of Maryland, USA, 2007.
[19] M. Weidemann, A. Kloes, B. Iniguez, "Compact model for electric field at pinch-off and channel length shortening in bulk MOSFET," Proceedings EDSSC 2007, Tainan, Taiwan, 2007.
[18] A. Kloes, M. Weidemann, B. Iniguez, "Analytical 3D approach for modeling the electrostatic potential in triple-gate SOI MOSFETs," Proceedings EDSSC 2007, Tainan, Taiwan, 2007.
[17] A. Kloes, M. Weidemann, "Self-consistent 2D compact modeling of nanoscale bulk MOSFETs," Solid-State Electron., Vol. 51, No. 5, pp. 739-748, 2007.
================================== 2006 ==================================
[16] M. Weidemann, M. Jung, A. Kloes, "Closed-form model of barrier height in bulk MOSFET including 2D effects and electron statistics," Proceedings ICSICT 2006, Shanghai, China, 2006.
[15] M. Weidemann, M. Jung, A. Kloes, "Analytical, physics-based 2D model for the barrier height in nanoscale MOSFETs valid from sub to above threshold," IEEE EDS Workshop on Advanced Electron Devices, Fraunhofer-Institute IMS, Duisburg, Germany, 2006.
[14] A. Kloes, M. Weidemann, "FEM-Simulation von Nanoscale-MOSFETs," Fachtagung Nano.tage 2006, TÜV SÜD Akademie GmbH, Munich, Germany, 2006.
[13] A. Kloes, "Nanotechnologie in der Elektronik: Ein Ausblick auf die Bauelemente der Zukunft," Fachtagung Sensorik – Messtechnik – Technologien 2006, Wetzlar, Germany, 2006.
================================== 2005 ==================================
[12] A. Kloes, "Unified current equation for predictive modeling of submicron MOSFETs," Solid-State Electron., Vol. 49, No. 1, pp. 85–95, 2005.
================================== 2002 ==================================
[11] A. Kloes, A. Kostka, "PREDICTMOS – a contribution to performance assessment of SoC with regard to process technology," Workshop “Heterogeneous reconfigurable systems on chip”, Hamburg, Germany, 2002.
================================== 2000 ==================================
[10] A. Kloes, A. Kostka, "PREDICTMOS – a predictive compact model of small-geometry MOSFETs for circuit simulation and device scaling calculations," Solid-State Electron., Vol. 44, No. 7, pp. 1145–1156, 2000.
================================== 1997 ==================================
[9] A. Kloes, D. Freund, A. Kostka, "Physics-based, predictive compact modeling of lateral bipolar transistors and short-channel MOSFET´s by conformal mappings," GMM Fachbericht 17: Mikroelektronik ´97, VDE-Verlag GmbH, Berlin, 1997.
[8] A. Kloes, "Analytische Modellierung mehrdimensionaler Effekte in Submikron MOSFET´s," Dissertation, Fortschritt-Berichte VDI Reihe 9 Nr. 261. Düsseldorf: VDI Verlag 1997.
================================== 1996 ==================================
[7] A. Kloes, A. Kostka, "A new physics-based, predictive compact model for small geometry MOSFET´s including two-dimensional calculations with a close link to process and layout data," IEDM Technical Digest, pp. 147–150, San Francisco, USA, 1996.
[6] A. Kloes, A. Kostka, "A physics-based, analytical model for the threshold voltage in MOSFET´s using a unified approach to account for short- and narrow-channel effects," 1996 International Electron Devices and Materials Symposia, Symposium A/D, pp. 285–288, National Tsing Hua University, Hsinchu, Taiwan, R.O.C, 1996.
[5] D. Freund, A. Kloes, A. Kostka, "Conformal mapping techniques for the analytical, two-dimensional calculation of currents in lateral bipolar transistor structures," Solid-State Electron., Vol. 39, No. 4, pp. 529–540, 1996.
[4] A. Kloes, A. Kostka, "A new analytical method of solving 2D Poisson´s equation in MOS devices applied to threshold voltage and subthreshold modeling," Solid-State Electron., Vol. 39, No. 12, pp. 1761–1775, 1996.
================================== 1995 ==================================
[3] A. Kloes, A. Kostka, "A fully 2D, analytical model for the geometry and voltage dependence of threshold voltage in submicron MOSFET´s," Simulation of Semiconductor Devices and Processes, Vol. 6, pp. 218–221, Springer-Verlag, Wien, 1995.
================================== 1993 ==================================
[2] D. Freund, A. Kloes, A. Kostka, "A 2D analytical model of current-flow in lateral bipolar transistor structures," Simulation of Semiconductor Devices and Processes, Vol. 5, pp. 425–428, Springer-Verlag, Wien, 1993.
[1] D. Freund, A. Kloes, A. Kostka, "An analytical model of current-splitting in CMOS compatible lateral bipolar transistors," ESSDERC 93, S. 29-32, Editions Frontieres, 1993.
Dissertationen
[12] Christian Roemer, "Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors," PhD-Thesis, Electrical, and Automatic Control Engineering, Universitat Rovira i Virgili, (02.05.2024), 2024.
[11] Aristeidis Nikolaou, "Compact Modeling of Variability in Organic Thin-Film Transistors," PhD-Thesis, Electrical, and Automatic Control Engineering, Universitat Rovira i Virgili, (10.10.2023), 2023.
[10] Jakob Leise, "Charge-Based Compact Modeling of Capacitances and Low-Frequency Noise in Organic Thin-Film Transistors," PhD-Thesis, Electrical, and Automatic Control Engineering, Universitat Rovira i Virgili, (26.04.2022), 2022.
[9] Jakob Prüfer, "Compact DC Modelling of Short-Channel Effects in Organic Thin-Film Transistors" PhD-Thesis, Electrical, and Automatic Control Engineering, Universitat Rovira i Virgili, (28.02.2022 via Zoom), 2022.
[8] Kerim Yilmaz, "Analytical Modeling of Ultrashort-Channel MOS Transistors," PhD-Thesis, Electrical, and Automatic Control Engineering, Universitat Rovira i Virgili, (24.02.2022 via Zoom), 2022.
[7] Atieh Farokhnejad, "Compact Modeling of Intrinsic Capacitances in Double-Gate Tunnel-FETs" PhD-Thesis, Electrical, and Automatic Control Engineering, Universitat Rovira i Virgili, (16.07.2020 via Zoom), 2020.
[6] Fabian Horst, "Compact DC Modeling of Tunnel-FETs," PhD-Thesis, Electrical and Automatic Control Engineering, Universitat Rovira i Virgili, (29.11.2019), 2019.
[5] Fabian Hosenfeld, "NEGF Based Analytical Modeling of Advanced MOSFETs," PhD-Thesis, Electrical and Automatic Control Engineering, Universitat Rovira i Virgili, (15.12.2017), 2017.
[4] Michael Gräf, "Two-Dimensional Analytical Modeling of Tunnel-FETs," PhD-Thesis, Electrical and Automatic Control Engineering, Universitat Rovira i Virgili, (04.06.2017), 2017.
[3] Thomas Holtij, "Analytical Compact Modeling of Nanoscale Multiple-Gate MOSFETs," PhD-Thesis, Department of Electronic, Electrical and Automatic Control Engineering, Universitat Rovira i Virgili, (18.09.2014), 2014.
[2] Mike Schwarz, "Two-dimensional Analytical Predictive Modeling of Schottky Barrier SOI and Multi-Gate MOSFETs," PhD-Thesis, Department of Electronic, Electrical and Automatic Control Engineering, Universitat Rovira i Virgili, (22.10.2012), 2012.
[1] Michaela Weidemann, "Analytical Predictive 2D Modeling of Pinch-off Behavior in Nanoscale Multi-Gate MOSFETs," PhD-Thesis, Department of Electronic, Electrical and Automatic Control Engineering, Universitat Rovira i Virgili, (12.01.2011), 2011.
Abschlussarbeiten
[21] Malte Koch, Master Thesis, “Electrical Characterization of neuromorphic devices for the development of a physics-based Compact model, “ 2024.
[20] Nadine Sarah Dersch, „Efficient Circuit Simulation of a Memristive Crossbar Array with Synaptic Weight Variability: Focused on the Consideration of Resistive Random Access Memory“, Master-Thesis, TH Mittelhessen, 2023.
[19] Stefan Peter Resch, "A Theoretical and Experimental Overview of the Organic Permeable Base Transistor," Master-Thesis, TH Mittelhessen, 2019.
[18] Francisco De Asis Criado López, "Calculation of Source to Drain Tunneling Current in Ultra-Short Channel MOS Transistor by Wavelet Transform," Master-Thesis, TH Mittelhessen, 2019.
[17] Christian Römer, "Measurement-Setups and Evaluation of Time-Dependent Effects in DNTT-Based Organic Thin-Film Transistors," Master-Thesis, TH Mittelhessen, 2019.
[16] Jakob Simon Leise, "Charge-Based Compact Modeling of Capacitances in Organic Thin-Film Transistors," Master-Thesis, TH Mittelhessen, 2018.
[15] Jakob Prüfer, "Compact Modelling of Injection Effects in Organic Field-Effect Transistors," Master-Thesis, TH Mittelhessen, 2017.
[14] Fabian Horst, "2D Closed-Form Model of Band-to-Band Tunneling Current in Double-Gate n-Tunnel-FETs," Master-Thesis, TH Mittelhessen, 2015.
[13] Florian Fischer, "AC-Modell für einen Double-Gate Tunnel-MOSFET," Master-Thesis, TH Mittelhessen, 2015.
[12] Anita Farokhnejad, "Wavelet transform for analytical calculation of barrier transmission," Master-Thesis, TH Mittelhessen, 2015.
[11] Julian Henkel, "Machbarkeitsstudie zur Verwendung von GO als Leiterbahn oder Via," Bachelor-Thesis, TH Mittelhessen, 2014.
[10] Fabian Hosenfeld, "Implementierung einer dynamischen Look-up-Table für Kompaktmodelle in Verilog-A," Master-Thesis, TH Mittelhessen, 2014.
[9] Harith Al Khafaji, "Simulation von Random Dopand Fluctuation mit TCAD Sentaurus," Master-Thesis, TH Mittelhessen, 2014.
[8] Carsten Lechens, "Charakterisierung dünner Schichten zur Herstellung organischer Transistoren mit Inkjet- und Spin-Coat-Technik," Diplomarbeit, TH Mittelhessen, 2013.
[7] Muhammet-Hakan Sahin, "Simulation von Nanostruktur Multiple-Gate-MOSFETs," Diplomarbeit, TH Mittelhessen, 2012.
[6] Michael Gräf, "Simulation und Modellierung von Tunnel-FETs," Diplomarbeit, TH Mittelhessen, 2012.
[5] Franziska Hain, "Simulation und Modellierung von OFETs," Diplomarbeit, TH Mittelhessen, 2012.
[4] Andres Navas, "Verilog-A Implementation of a Multi-Gate MOSFET Model," Master-Thesis, TH Mittelhessen, 2012.
[3] Manuel Wöll, "Entwicklung eines vollständig tintenstrahldruckbasierten Herstellungsprozesses für organische Feldeffekttransistoren," Diplomarbeit, TH Mittelhessen, 2011.
[2] Thomas Holtij, "Analytische Modellierung parasitärer Widerstände in Multiple-Gate MOSFETs," Diplomarbeit, TH Mittelhessen, 2010.
[1] Mario Rompel, "Tool zur Parameterextraktion von Kompaktmodellen," Diplomarbeit, TH Mittelhessen, 2009.
Projektarbeiten
[16] Maximilian Feiling, Project Work,”Quantum Transport Simulation of a Schottky Barrier Junction,” 2024.
[15] Malte Koch, Project Work, “The Transient Response of Organic Electrochemical Transistors,“ 2023.
[14] Malte Koch, Project Work, “Transient Simulations of Organic Electrochemical Transistors Including Synaptic Effects,“ 2023.
[13] Malte Koch, Bachelor Thesis, “Development of the virtual source compact model and adaptation to an organic electrochemical transistor on the basis of self-recorded measurements,“ 2021.
[12] Malte Koch, "Design and TCAD Simulation of an organic Bipolar-Junction-Transistor Amplifier," 2021.
[11] Dena Dehdashti Akhavan, "Literatur Review, TCAD Calibration, and Simulation of Planar and Vertical OFETs," 2019.
[10] Tobias Proehl, "MIT Virtual Source Compact Model Adaptation to Organic Field-Effect Transistor," 2019.
[9] Philipp Zumkeller, "Erstellung Einer Graphischen Benutzeroberfläche in Matlab für die Darstellung von Kompaktmodellen," 2019.
[8] Bernhard Zinn, "Simulation von Organischen Feldeffekttransistoren (OFETs) mit Gestapelten Strukturen," 2018.
[7] Christian Römer, "Vergleich von Gate-all-Around Feldeffekttransistoren mit Double-Gate Feldeffekttransistoren Durch Simulativ Ermittelte Potenzialverläufe," 2018.
[6] Fabian Horst, "Simulation of a differential amplifier built with organic PMOS-transistors," 2015
[5] Julian Henkel, "Programming a Graphical Interface to Optimize Analytical Component Modeling," 2015.
[4] Harith Al Khafaji, "Analysis of Random Dopant Fluctuation for Tunnel FETs," 2015.
[3] Fabian Hosenfeld, "Analysis of the State-Space for MOS Transistors," 2014.
[2] Michael Gräf, "Analyse und Materialtests von Druckertinten für Druckbare Elektronik," 2011.
[1] Thomas Holtij, "Numerical Finite Element Method (FEM) Simulation with Respect to Quantum Mechanical Effects in Junctionless Double-Gate MOSFET Structures," 2011.